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2SD874贴片三极管 SOT-89封装三极管2SD874参数

2SD874贴片三极管 SOT-89封装三极管2SD874参数

【南京南山半导体有限公司 — 长电贴片三极管选型资料】http://www.51wendang.com

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

=

= =FEATURES =

=z Low Collector-Emitter Saturation Voltage =z Large Collector Power Dissipation =SOT-89-3L Plastic-Encapsulate Transistors 2SD874 TRANSISTOR (NPN) z Mini Power Type Package

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature 30 25 5 1 500 250 150 -55~+150 V V V A mW ℃/W ℃ ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol V(BR)CBO V(BR)CEOICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test conditions Min Typ Max Unit IC=10µA,IEIC=2mA,IBV(BR)EBO IE=10µA,ICVCB=20V,IEVCE=10V, ICVEB=4V,ICVCE=5V, IC

2SD874贴片三极管 SOT-89封装三极管2SD874参数

IC=500mA,IB=50mA VCE=10V,IC=50mA, f=200MHzVCB=10V, IE=0, f=1MHz IC=500mA,IB=50mA 200 20 pF

CLASSIFICATION OF hFE(1)

RANGE 85–––340

A,Nov,2010

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